SUM80090E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

128A Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

240A

Factory Lead Time :

14 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Surface Mount :

yes

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

Unknown

Drain to Source Voltage (Vdss) :

150V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3425pF @ 75V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Power Dissipation-Max :

375W Tc

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Series :

ThunderFET®

Avalanche Energy Rating (Eas) :

180 mJ

Continuous Drain Current (ID) :

128A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0105Ohm

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

150V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Threshold Voltage :

5V