SUM40N02-12P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

11 ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

12m Ω @ 20A, 10V

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

2

Power Dissipation :

3.75W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Published :

2009

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Pin Count :

4

Continuous Drain Current (ID) :

40A

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Element Configuration :

Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24 ns

Pulsed Drain Current-Max (IDM) :

90A

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 83W Tc