SUM40010EL-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

120A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

320 mJ

Power Dissipation-Max :

375W Tc

Vgs (Max) :

±20V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Drain-source On Resistance-Max :

0.0016Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

11155pF @ 30V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 30A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

300A

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Series :

ThunderFET®