STX817A
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- Mfr.Part #
- STX817A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO92-3
- Stock
- 29,510
- In Stock ：
- 29,510
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transition Frequency :
- 50MHz
- Mount :
- Through Hole
- Power Dissipation :
- 900mW
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 50MHz
- Termination :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Transistor Type :
- PNP
- hFE Min :
- 140
- Number of Elements :
- 1
- Packaging :
- Bulk
- Max Collector Current :
- 1.5A
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Wire
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- Length :
- 4.95mm
- Current - Collector Cutoff (Max) :
- 1mA
- Height :
- 4.95mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 900mW
- Width :
- 3.94mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- STX817
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- STX817A
,TO-226_straightlead.jpg)
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
STX817A Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
STX817A Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
STX817A Applications
There are a lot of STMicroelectronics
STX817A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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