STU4N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3.75V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

REACH SVHC :

No SVHC

Power Dissipation-Max :

70W Tc

Length :

6.6mm

Operating Temperature :

150°C TJ

Series :

SuperMESH3™

Height :

6.9mm

Number of Terminations :

3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Base Part Number :

STU4N

Factory Lead Time :

12 Weeks

Pin Count :

3

Rise Time :

9ns

Width :

2.4mm

Drain to Source Breakdown Voltage :

620V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

3.8A

Vgs (Max) :

±30V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Mount :

Through Hole

Fall Time (Typ) :

19 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.9A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 50V

ECCN Code :

EAR99

Packaging :

Tube

Contact Plating :

Tin

Turn On Delay Time :

10 ns

Power Dissipation :

70W

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

29 ns

Radiation Hardening :

No