STU4N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Length :

10.4mm

Turn-Off Delay Time :

21 ns

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Additional Feature :

ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Threshold Voltage :

3.75V

Drain to Source Breakdown Voltage :

525V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

10A

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

45W Tc

Radiation Hardening :

No

Base Part Number :

STU4N

Width :

4.6mm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

334pF @ 100V

Continuous Drain Current (ID) :

2.5A

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Packaging :

Tube

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Transistor Element Material :

SILICON

Height :

15.75mm

Power Dissipation :

45W

Number of Terminations :

3

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Series :

SuperMESH3™

Turn On Delay Time :

8 ns

Avalanche Energy Rating (Eas) :

110 mJ

ECCN Code :

EAR99

Rise Time :

7ns

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 1.25A, 10V

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ