STSJ50NH3LL

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.013Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width) Exposed Pad

Terminal Finish :

NICKEL PALLADIUM GOLD

Turn On Delay Time :

15 ns

FET Type :

N-Channel

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Width :

4mm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

3W Ta 50W Tc

Voltage - Rated DC :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Rise Time :

32ns

Length :

5mm

Avalanche Energy Rating (Eas) :

150 mJ

Additional Feature :

LOW THRESHOLD

Current Rating :

50A

Drain Current-Max (Abs) (ID) :

12A

Continuous Drain Current (ID) :

50A

Height :

1.65mm

Terminal Form :

Gull wing

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

18 ns

Qualification Status :

Not Qualified

Number of Elements :

1

Series :

STripFET™

Power Dissipation :

50W

Base Part Number :

STSJ50

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

965pF @ 25V

Fall Time (Typ) :

8.5 ns

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8