STSJ100NHS3LL

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 25V

Base Part Number :

STSJ100N

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

8 ns

Power Dissipation-Max :

3W Ta 70W Tc

Power Dissipation :

70W

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-SOIC (0.154, 3.90mm Width) Exposed Pad

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0057Ohm

Number of Pins :

8

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Terminations :

8

Mount :

Surface Mount

Series :

STripFET™ III

Qualification Status :

Not Qualified

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 10A, 10V

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Rise Time :

45ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

N-Channel

Turn-Off Delay Time :

68 ns