STQ2NK60ZR-AP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Qualification Status :

Not Qualified

Factory Lead Time :

8 Weeks

DS Breakdown Voltage-Min :

600V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Packaging :

Tape and Box (TB)

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

8Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8 Ω @ 700mA, 10V

Series :

SuperMESH™

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

90 mJ

Current - Continuous Drain (Id) @ 25°C :

400mA Tc

Pulsed Drain Current-Max (IDM) :

1.6A

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Continuous Drain Current (ID) :

400mA

Power Dissipation-Max :

3W Tc

Base Part Number :

STQ2

Drain Current-Max (Abs) (ID) :

0.4A

FET Type :

N-Channel

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

O-PBCY-T3