STQ2LN60K3-AP

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Mfr.Part #
STQ2LN60K3-AP
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
MOSFET N-CH 600V 600MA TO92-3
Stock
2,320
In Stock :
2,320

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Input Capacitance (Ciss) (Max) @ Vds :
235pF @ 50V
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Cut Tape (CT)
Continuous Drain Current (ID) :
600mA
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Series :
SuperMESH3™
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Rds On (Max) @ Id, Vgs :
4.5 Ω @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C :
600mA Tc
Fall Time (Typ) :
21 ns
ECCN Code :
EAR99
FET Type :
N-Channel
Power Dissipation :
2.5W
Factory Lead Time :
9 Weeks
Drain to Source Breakdown Voltage :
600V
Rise Time :
8.5ns
Base Part Number :
STQ2
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Turn On Delay Time :
10 ns
Power Dissipation-Max :
2.5W Tc
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
23.5 ns
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
STQ2LN60K3-AP
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STQ2LN60K3-AP from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:STQ2, Mounting Type:Through Hole, STQ2LN60K3-AP pinout, STQ2LN60K3-AP datasheet PDF, STQ2LN60K3-AP amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STQ2LN60K3-AP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STQ2LN60K3-AP


N-Channel Cut Tape (CT) 4.5 Ω @ 1A, 10V ±30V 235pF @ 50V 12nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

STQ2LN60K3-AP Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 235pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 600mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STQ2LN60K3-AP Features


a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23.5 ns


STQ2LN60K3-AP Applications


There are a lot of STMicroelectronics
STQ2LN60K3-AP applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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