STP120NF04
- Mfr.Part #
- STP120NF04
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220AB
- Stock
- 75,210
- In Stock :
- 75,210
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Elements :
- 1
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 4.5 V
- ECCN Code :
- EAR99
- Threshold Voltage :
- 4.5V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300W
- Mounting Type :
- Through Hole
- Series :
- STripFET™ II
- Power Dissipation-Max :
- 300W Tc
- Base Part Number :
- STP120
- REACH SVHC :
- No SVHC
- Current Rating :
- 120A
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 480A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 50A
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 50A, 10V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 40V
- Rise Time :
- 220ns
- Turn-Off Delay Time :
- 80 ns
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 50 ns
- Drain-source On Resistance-Max :
- 0.005ohm
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Datasheets
- STP120NF04

N-Channel Tube 5m Ω @ 50A, 10V ±20V 5100pF @ 25V 150nC @ 10V TO-220-3
STP120NF04 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4.5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STP120NF04 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 480A.
a threshold voltage of 4.5V
STP120NF04 Applications
There are a lot of STMicroelectronics
STP120NF04 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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