STP03D200
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- Mfr.Part #
- STP03D200
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 1200V 0.1A TO220
- Stock
- 10,337
- In Stock ：
- 10,337
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- STP03D
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA
- Polarity :
- NPN
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 20V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Power - Max :
- 40W
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Length :
- 10.4mm
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA 10V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500μA, 50mA
- Width :
- 4.6mm
- Height :
- 9.15mm
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Collector Base Voltage (VCBO) :
- 2kV
- Transistor Type :
- NPN - Darlington
- Weight :
- 2.299997g
- Datasheets
- STP03D200
NPN - Darlington 150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
STP03D200 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 500μA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 20V.This device displays a 1200V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 100mA volts.
STP03D200 Features
the DC current gain for this device is 200 @ 30mA 10V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 500μA, 50mA
the emitter base voltage is kept at 20V
STP03D200 Applications
There are a lot of STMicroelectronics
STP03D200 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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