STL9P3LLH6

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Mfr.Part #
STL9P3LLH6
Manufacturer
STMicroelectronics
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET P-CH 30V 9A POWERFLAT
Stock
44,729
In Stock :
44,729

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
20 Weeks
FET Type :
P-Channel
Package / Case :
8-PowerVDFN
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Packaging :
Tape and Reel (TR)
Number of Pins :
8
Vgs(th) (Max) @ Id :
1V @ 250μA
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
15m Ω @ 4.5A, 10V
Base Part Number :
STL9
Series :
STripFET™ H6
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2615pF @ 25V
Mount :
Surface Mount
Continuous Drain Current (ID) :
9A
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 4.5V
Power Dissipation-Max :
3W Ta
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Datasheets
STL9P3LLH6
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STL9P3LLH6 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Base Part Number:STL9, STL9P3LLH6 pinout, STL9P3LLH6 datasheet PDF, STL9P3LLH6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STL9P3LLH6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STL9P3LLH6


P-Channel Tape & Reel (TR) 15m Ω @ 4.5A, 10V ±20V 2615pF @ 25V 24nC @ 4.5V 30V 8-PowerVDFN

Description


The STL9P3LLH6 is a PowerFLATTM 3.3x3.3 P-channel -30 V, 12 mΩ typ., -9 A STripFETTM H6 Power MOSFET. This device is a P-channel Power MOSFET with a revolutionary trench gate structure designed using the STripFETTM H6 technology. In all packages, the resultant Power MOSFET has an extremely low RDS(on).



Features


  • High avalanche ruggedness

  • Low gate drive power loss

  • Very low on-resistance

  • Very low gate charge

  • High input impedance



Applications


  • Switching applications

  • Small motor control

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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