STL9N60M2
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- Mfr.Part #
- STL9N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.8A PWRFLAT56
- Stock
- 17,513
- In Stock ：
- 17,513
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Package / Case :
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Series :
- MDmesh™ II Plus
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Resistance :
- 760mOhm
- Base Part Number :
- STL9
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 100V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 48W Tc
- Factory Lead Time :
- 26 Weeks
- Rds On (Max) @ Id, Vgs :
- 860m Ω @ 2.4A, 10V
- Packaging :
- Cut Tape (CT)
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 8.8 ns
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs (Max) :
- ±25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 25V
- Turn-Off Delay Time :
- 22 ns
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 13.5 ns
- Rise Time :
- 7.5ns
- Continuous Drain Current (ID) :
- 4.8A
- Datasheets
- STL9N60M2
N-Channel Cut Tape (CT) 860m Ω @ 2.4A, 10V ±25V 320pF @ 100V 10nC @ 10V 8-PowerVDFN
STL9N60M2 Overview
A device's maximal input capacitance is 320pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 22 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STL9N60M2 Features
a continuous drain current (ID) of 4.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 22 ns
STL9N60M2 Applications
There are a lot of STMicroelectronics
STL9N60M2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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