STL19N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2.3A

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta 12.5A Tc

Continuous Drain Current (ID) :

12.5A

Rise Time :

7ns

Resistance :

215mOhm

Package / Case :

8-PowerVDFN

Series :

MDmesh™ V

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Surface Mount

Power Dissipation-Max :

2.8W Ta 90W Tc

Turn-Off Delay Time :

11 ns

Drain to Source Voltage (Vdss) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Case Connection :

DRAIN

Base Part Number :

STL19

Factory Lead Time :

12 Weeks

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

240m Ω @ 7.5A, 10V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-PSSO-N4

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Fall Time (Typ) :

9 ns

Pulsed Drain Current-Max (IDM) :

50A

Number of Pins :

8

Drain to Source Breakdown Voltage :

710V

Operating Temperature :

150°C TJ