STL18NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

310mOhm

Base Part Number :

STL18

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pin Count :

5

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Height :

950μm

Turn On Delay Time :

20 ns

Length :

8mm

Threshold Voltage :

3V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Width :

8mm

Rise Time :

22ns

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

2.1A

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

310m Ω @ 6A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

5

Element Configuration :

Single

Fall Time (Typ) :

40 ns

Mount :

Surface Mount

Series :

MDmesh™ II

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

REACH SVHC :

No SVHC

Case Connection :

DRAIN

ECCN Code :

EAR99

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

8.4A

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

110W

Continuous Drain Current (ID) :

12A

Turn-Off Delay Time :

50 ns

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta 12A Tc

Power Dissipation-Max :

3W Ta 110W Tc

Lead Free :

Lead Free

Number of Pins :

5

Mounting Type :

Surface Mount

FET Type :

N-Channel