STL18N65M2
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- Mfr.Part #
- STL18N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8A POWERFLAT HV
- Stock
- 2,411
- In Stock ：
- 2,411
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 21.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 764pF @ 100V
- Mount :
- Surface Mount
- Base Part Number :
- STL18
- Continuous Drain Current (ID) :
- 8A
- Rds On (Max) @ Id, Vgs :
- 365m Ω @ 4A, 10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 11 ns
- Power Dissipation-Max :
- 57W Tc
- Series :
- MDmesh™ M2
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 650V
- Drain Current-Max (Abs) (ID) :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Width :
- 5.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Factory Lead Time :
- 26 Weeks
- Turn-Off Delay Time :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 950μm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.35mm
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- 8-PowerVDFN
- ECCN Code :
- EAR99
- Datasheets
- STL18N65M2
N-Channel Cut Tape (CT) 365m Ω @ 4A, 10V ±25V 764pF @ 100V 21.5nC @ 10V 650V 8-PowerVDFN
STL18N65M2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 764pF @ 100V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 46 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STL18N65M2 Features
a continuous drain current (ID) of 8A
the turn-off delay time is 46 ns
a 650V drain to source voltage (Vdss)
STL18N65M2 Applications
There are a lot of STMicroelectronics
STL18N65M2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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