STL18N55M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

270mOhm

JESD-609 Code :

e3

Continuous Drain Current (ID) :

13A

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Mount :

Surface Mount

Rise Time :

9.5ns

Vgs (Max) :

±25V

Operating Temperature :

150°C TJ

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

550V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Pbfree Code :

yes

Number of Pins :

4

Transistor Application :

SWITCHING

Turn-Off Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

270m Ω @ 6A, 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1352pF @ 100V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Package / Case :

8-PowerVDFN

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta 13A Tc

Series :

MDmesh™ V

Power Dissipation :

3W

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STL18

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Fall Time (Typ) :

13 ns

Pulsed Drain Current-Max (IDM) :

9.6A

Number of Terminations :

4

Terminal Position :

Single

ECCN Code :

EAR99

Pin Count :

4

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Power Dissipation-Max :

3W Ta 90W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V