STL17N65M5
- Mfr.Part #
- STL17N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 1.8A POWERFLAT
- Stock
- 3,582
- In Stock :
- 3,582
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.8W Ta 70W Tc
- Operating Temperature :
- 150°C TJ
- Width :
- 8mm
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 374m Ω @ 5.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Fall Time (Typ) :
- 11 ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 10A
- Length :
- 8mm
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs (Max) :
- ±25V
- Base Part Number :
- STL17
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 8ns
- Package / Case :
- 8-PowerVDFN
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Height :
- 950μm
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Ta 10A Tc
- Series :
- MDmesh™ V
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 650V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Datasheets
- STL17N65M5

N-Channel Tape & Reel (TR) 374m Ω @ 5.5A, 10V ±25V 816pF @ 100V 22nC @ 10V 8-PowerVDFN
STL17N65M5 Overview
A device's maximum input capacitance is 816pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STL17N65M5 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 650V voltage
STL17N65M5 Applications
There are a lot of STMicroelectronics
STL17N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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