STL17N3LLH6
- Mfr.Part #
- STL17N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A POWERFLAT
- Stock
- 19,693
- In Stock :
- 19,693
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STL17
- Radiation Hardening :
- No
- Number of Pins :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 12 ns
- Pulsed Drain Current-Max (IDM) :
- 68A
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Power Dissipation :
- 50W
- Power Dissipation-Max :
- 2W Ta 50W Tc
- Turn On Delay Time :
- 9.5 ns
- Series :
- DeepGATE™, STripFET™ VI
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 4.5mOhm
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerVDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1690pF @ 25V
- Rise Time :
- 30ns
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 37 ns
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Threshold Voltage :
- 1V
- Pin Count :
- 8
- Number of Elements :
- 1
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 17A
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 8.5A, 10V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- JESD-30 Code :
- S-XDSO-N8
- Datasheets
- STL17N3LLH6

N-Channel Tape & Reel (TR) 4.5m Ω @ 8.5A, 10V ±20V 1690pF @ 25V 17nC @ 4.5V 8-PowerVDFN
STL17N3LLH6 Description
A redesigned gate structure and the sixth generation of STripFET DeepGATE technology were used to create the N-channel Power MOSFET STL17N3LLH6. The Power MOSFET that results has the lowest RDS(on) among all packages.
STL17N3LLH6 Features
-
High avalanche ruggedness
-
Low gate drive power losses
-
Very low switching gate charge
-
RDS(on)* Qgindustry benchmark
-
Extremely low on-resistance RDS(on)
STL17N3LLH6 Applications
-
Industrial
-
Enterprise systems
-
Personal electronics
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