STL16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Peak Reflow Temperature (Cel) :

260

Resistance :

299mOhm

Series :

MDmesh™ V

FET Type :

N-Channel

Power Dissipation-Max :

3W Ta 90W Tc

Number of Elements :

1

Vgs (Max) :

±25V

Pin Count :

4

Turn On Delay Time :

25 ns

Element Configuration :

Single

Length :

8mm

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Height :

950μm

Transistor Element Material :

SILICON

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STL16

Rise Time :

7ns

Threshold Voltage :

4V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

8A

Rds On (Max) @ Id, Vgs :

299m Ω @ 6A, 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

12A

JESD-30 Code :

S-PSSO-N4

Avalanche Energy Rating (Eas) :

200 mJ

Pbfree Code :

yes

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

2A

Fall Time (Typ) :

6 ns

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Width :

8mm

Package / Case :

8-PowerVDFN

Power Dissipation :

90W

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns