STL160N4F7

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Mfr.Part #
STL160N4F7
Manufacturer
STMicroelectronics
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 40V 120A POWERFLAT
Stock
8,158
In Stock :
8,158

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
111W Tc
Base Part Number :
STL160
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 25V
Package / Case :
8-PowerVDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
37 Weeks
Drain to Source Voltage (Vdss) :
40V
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Rds On (Max) @ Id, Vgs :
2.5m Ω @ 16A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Vgs (Max) :
±20V
Series :
STripFET™ F7
Datasheets
STL160N4F7
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STL160N4F7 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STL160, Package / Case:8-PowerVDFN, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, STL160N4F7 pinout, STL160N4F7 datasheet PDF, STL160N4F7 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STL160N4F7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STL160N4F7


N-Channel Tape & Reel (TR) 2.5m Ω @ 16A, 10V ±20V 2300pF @ 25V 29nC @ 10V 40V 8-PowerVDFN

Description


The STL160N4F7 is an N-channel 40 V, 2.1 m|? typ., 120A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. With an improved trench gate structure and STripFET F7 technology, this N-channel Power MOSFET has an extremely low on-state resistance and lower internal capacitance and gate charge for quicker and more effective switching.



Features


  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness

  • Among the lowest RDS(on) on the market

  • Excellent FoM (figure of merit)

  • Continuous drain current (ID)



Applications


  • Switching applications

  • Small motor control

  • Switch Mode Power Supplies (SMPS)

  • Power-Over-Ethernet (PoE)

  • Solar inverters

  • Automotive applications


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