STL160N3LLH6
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- Mfr.Part #
- STL160N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 160A POWERFLAT
- Stock
- 10,483
- In Stock ：
- 10,483
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STL160
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 136W Tc
- Turn On Delay Time :
- 18.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Length :
- 4.75mm
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Series :
- DeepGATE™, STripFET™ VI
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 61.5nC @ 4.5V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 160A
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 54 ns
- Threshold Voltage :
- 1V
- Rds On (Max) @ Id, Vgs :
- 1.3m Ω @ 17.5A, 10V
- Package / Case :
- 8-PowerVDFN
- Height :
- 880μm
- Width :
- 5.75mm
- Rise Time :
- 32ns
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 5
- Power Dissipation :
- 80W
- Resistance :
- 1.3MOhm
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Number of Terminations :
- 5
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 107.5 ns
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 20 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 6375pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Datasheets
- STL160N3LLH6
N-Channel Tape & Reel (TR) 1.3m Ω @ 17.5A, 10V ±20V 6375pF @ 25V 61.5nC @ 4.5V 8-PowerVDFN
STL160N3LLH6 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 900 mJ.A device's maximal input capacitance is 6375pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 160A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 107.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
STL160N3LLH6 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 107.5 ns
a threshold voltage of 1V
STL160N3LLH6 Applications
There are a lot of STMicroelectronics
STL160N3LLH6 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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