STL13NM60N
- Mfr.Part #
- STL13NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A PWRFLAT HV
- Stock
- 2,308
- In Stock :
- 2,308
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 85 ns
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 8mm
- Operating Temperature :
- 150°C TJ
- Height :
- 950μm
- Element Configuration :
- Single
- Package / Case :
- 8-PowerVDFN
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 10A
- Resistance :
- 385mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 93 mJ
- Number of Pins :
- 5
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vgs (Max) :
- ±30V
- Threshold Voltage :
- 3V
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 5A, 10V
- REACH SVHC :
- No SVHC
- Width :
- 8mm
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ II
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 50 ns
- Case Connection :
- DRAIN
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Mounting Type :
- Surface Mount
- Base Part Number :
- STL13
- Pulsed Drain Current-Max (IDM) :
- 7.6A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Power Dissipation :
- 90W
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 3W Ta 90W Tc
- Pin Count :
- 5
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 13 ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Breakdown Voltage :
- 600V
- Rise Time :
- 25ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 5
- Datasheets
- STL13NM60N

N-Channel Tape & Reel (TR) 385m Ω @ 5A, 10V ±30V 790pF @ 50V 30nC @ 10V 8-PowerVDFN
STL13NM60N can be described as an N-channel power MOSFET designed using the 2nd generation. This groundbreaking Power MOSFET associates a vertical layout to the company's strip layout, resulting in one of the most efficient devices in the world with the lowest gate charges and on-resistance. This makes it ideal to be used in the highest-demanding high-efficiency converters.
STL13NM60N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
STL13NM60N Applications
Switching applications
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