STL120N4F6AG

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Mfr.Part #
STL120N4F6AG
Manufacturer
STMicroelectronics
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 40V 55A POWERFLAT
Stock
6,548
In Stock :
6,548

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
20 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
96W Tc
Vgs (Max) :
±20V
Operating Temperature :
175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
8-PowerVDFN
Rds On (Max) @ Id, Vgs :
3.6m Ω @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C :
55A Tc
Series :
Automotive, AEC-Q101, STripFET™ F6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
3700pF @ 25V
FET Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mount :
Surface Mount
Continuous Drain Current (ID) :
55A
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
40V
ECCN Code :
EAR99
Base Part Number :
STL120
Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Packaging :
Cut Tape (CT)
Drain Current-Max (Abs) (ID) :
120A
Datasheets
STL120N4F6AG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STL120N4F6AG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:175°C TJ, Package / Case:8-PowerVDFN, Mounting Type:Surface Mount, Base Part Number:STL120, STL120N4F6AG pinout, STL120N4F6AG datasheet PDF, STL120N4F6AG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STL120N4F6AG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STL120N4F6AG


N-Channel Cut Tape (CT) 3.6m Ω @ 13A, 10V ±20V 3700pF @ 25V 63nC @ 10V 40V 8-PowerVDFN

STL120N4F6AG Description

This device is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all packages.


STL120N4F6AG Features

AEC-Q101 qualified

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Wettable flank package


STL120N4F6AG Applications

Switching applications


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