STL120N2VH5
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- Mfr.Part #
- STL120N2VH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 120A POWERFLAT
- Stock
- 14,378
- In Stock ：
- 14,378
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Fall Time (Typ) :
- 55 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 2.5V
- Base Part Number :
- STL120
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 3mOhm
- Turn-Off Delay Time :
- 76 ns
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 20V
- Width :
- 5.75mm
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 14A, 4.5V
- FET Type :
- N-Channel
- Power Dissipation :
- 80W
- Package / Case :
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 80W Tc
- Continuous Drain Current (ID) :
- 120A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 700mV
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 4660pF @ 15V
- Vgs (Max) :
- ±8V
- Turn On Delay Time :
- 21 ns
- Radiation Hardening :
- No
- Length :
- 4.75mm
- Rise Time :
- 60ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Series :
- STripFET™ V
- Height :
- 880μm
- Datasheets
- STL120N2VH5
N-Channel Tape & Reel (TR) 3m Ω @ 14A, 4.5V ±8V 4660pF @ 15V 29nC @ 2.5V 8-PowerVDFN
STL120N2VH5 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4660pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 76 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 21 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 700mV.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
STL120N2VH5 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 76 ns
a threshold voltage of 700mV
STL120N2VH5 Applications
There are a lot of STMicroelectronics
STL120N2VH5 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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