STL11N65M5
- Mfr.Part #
- STL11N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.5A POWERFLAT
- Stock
- 1,608
- In Stock :
- 1,608
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±25V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 650V
- Package / Case :
- 8-PowerVDFN
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 4.25A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STL11
- Mount :
- Surface Mount
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 34A
- Series :
- MDmesh™
- Terminal Form :
- Flat
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- QUAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 8.5A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.53Ohm
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Tc
- Power Dissipation-Max :
- 70W Tc
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 650V
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 644pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- JESD-30 Code :
- S-XQFP-F5
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STL11N65M5

N-Channel Tape & Reel (TR) 530m Ω @ 4.25A, 10V ±25V 644pF @ 100V 17nC @ 10V 650V 8-PowerVDFN
STL11N65M5 Description
STL11N65M5 features MDmeshTM M5's innovative vertical process technology combined with PowerMESHTM's horizontal layout. Consequently, it is particularly suitable for power-intensive and high-efficiency applications due to its extremely low on-resistance.
STL11N65M5 Features
-
Extremely low RDS(on)
-
100% avalanche tested
-
Low gate charge and input capacitance
-
Excellent switching performance
STL11N65M5 Applications
-
Audio Amplification
-
Signal Amplification
-
Switching Loads under 800mA
-
RF Circuits
-
Darlington Pairs
-
Many General Purpose Applications
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