STL11N4LLF5
- Mfr.Part #
- STL11N4LLF5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 11A POWERFLAT
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 8
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 37 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.9W Ta 50W Tc
- Packaging :
- Cut Tape (CT)
- Package / Case :
- 8-PowerVDFN
- Turn On Delay Time :
- 14 ns
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 12.9nC @ 4.5V
- Base Part Number :
- STL11
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- STripFET™ V
- Rds On (Max) @ Id, Vgs :
- 9.7m Ω @ 5.5A, 10V
- Rise Time :
- 42ns
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 44A
- Case Connection :
- DRAIN
- Power Dissipation :
- 50W
- Continuous Drain Current (ID) :
- 11A
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 5.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Datasheets
- STL11N4LLF5

N-Channel Cut Tape (CT) 9.7m Ω @ 5.5A, 10V ±20V 1570pF @ 25V 12.9nC @ 4.5V 8-PowerVDFN
STL11N4LLF5 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1570pF @ 25V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 37 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 44A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
STL11N4LLF5 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 44A.
STL11N4LLF5 Applications
There are a lot of STMicroelectronics
STL11N4LLF5 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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