STL11N3LLH6
- Mfr.Part #
- STL11N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A POWERFLAT
- Stock
- 28,859
- In Stock :
- 28,859
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 44A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Factory Lead Time :
- 20 Weeks
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Package / Case :
- 8-PowerVDFN
- Series :
- DeepGATE™, STripFET™ VI
- Resistance :
- 7.5mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 11A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Power Dissipation :
- 50W
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- STL11
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2W Ta 50W Tc
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1690pF @ 24V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 5.5A, 10V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Datasheets
- STL11N3LLH6

N-Channel Tape & Reel (TR) 7.5m Ω @ 5.5A, 10V ±20V 1690pF @ 24V 17nC @ 4.5V 8-PowerVDFN
STL11N3LLH6 Description
STL11N3LLH6 belongs to the family of N-channel Power MOSFETs that are designed based on STripFET? H6 technology with a new trench gate structure provided by STMicroelectronics to ensure outstanding low on?resistance and lower gate charge performance. This kind of technology can be used to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates.
STL11N3LLH6 Features
-
Low on?resistance
-
Lower gate charge
-
STripFET? H6 technology
-
A new trench gate structure
-
Available in the PowerFLATTM 3.3x3.3 package
STL11N3LLH6 Applications
-
Switching applications
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