STL117N4LF7AG
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- Mfr.Part #
- STL117N4LF7AG
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 119A POWERFLAT
- Stock
- 33,434
- In Stock ：
- 33,434
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 27.6nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1780pF @ 25V
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 40V
- Series :
- Automotive, AEC-Q101, STripFET™ F7
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 94W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 119A Tc
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-PowerVDFN
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 13A, 10V
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- STL117N4LF7AG
N-Channel Tape & Reel (TR) 3.5m Ω @ 13A, 10V ±20V 1780pF @ 25V 27.6nC @ 10V 40V 8-PowerVDFN
STL117N4LF7AG Description
This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STL117N4LF7AG Features
? AEC-Q101 qualified
? Among the lowest RDS(on) on the market
? Excellent FoM (figure of merit)
? Low Crss/Ciss ratio for EMI immunity
? High avalanche ruggedness
? Wettable flank package
STL117N4LF7AG Applications
? Switching applications
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