STL115N10F7AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-F5

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

72.5nC @ 10V

Pulsed Drain Current-Max (IDM) :

428A

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 50V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, STripFET™ F7

Avalanche Energy Rating (Eas) :

490 mJ

Power Dissipation-Max :

136W Tc

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Case Connection :

DRAIN

Base Part Number :

STL115

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

6m Ω @ 53A, 10V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

FET Type :

N-Channel

Package / Case :

8-PowerVDFN

Drain-source On Resistance-Max :

0.006Ohm

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

107A Tc

Terminal Form :

Flat