STL110N10F7
- Mfr.Part #
- STL110N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 107A POWERFLAT
- Stock
- 4,975
- In Stock :
- 4,975
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 107A
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Lead Free :
- Lead Free
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Power Dissipation :
- 5W
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Turn On Delay Time :
- 25 ns
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 36ns
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Cut Tape (CT)
- Drain Current-Max (Abs) (ID) :
- 75A
- Case Connection :
- DRAIN
- Length :
- 5.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 107A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 136W Tc
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-F5
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Number of Terminations :
- 5
- Height :
- 950μm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5117pF @ 50V
- Resistance :
- 6mOhm
- Fall Time (Typ) :
- 21 ns
- Avalanche Energy Rating (Eas) :
- 490 mJ
- Element Configuration :
- Single
- Series :
- DeepGATE™, STripFET™ VII
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 10A, 10V
- Mount :
- Surface Mount
- Base Part Number :
- STL110
- Width :
- 6.35mm
- Turn-Off Delay Time :
- 52 ns
- Datasheets
- STL110N10F7

N-Channel Cut Tape (CT) 6m Ω @ 10A, 10V ±20V 5117pF @ 50V 72nC @ 10V 100V 8-PowerVDFN
STL110N10F7 Description
The STL110N10F7 is an N-channel Power MOSFET that uses STripFET F7 technology with an improved trench gate structure to provide very low on-state resistance while also lowering internal capacitance and gate charge for faster and more efficient switching.
STL110N10F7 Features
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
STL110N10F7 Applications
Switching applications
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