STI6N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation-Max :

85W Tc

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Series :

SuperMESH5™

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2A, 10V

Packaging :

Tube

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Continuous Drain Current (ID) :

4.5A

Avalanche Energy Rating (Eas) :

85 mJ

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Weight :

2.084002g

Number of Terminations :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

110W

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 100V

Base Part Number :

STI6N

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 100µA

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Factory Lead Time :

17 Weeks

Mounting Type :

Through Hole

Number of Pins :

3