STI6N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Radiation Hardening :

No

Rise Time :

12ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Transistor Application :

SWITCHING

Turn On Delay Time :

22 ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Pulsed Drain Current-Max (IDM) :

22A

Terminal Position :

Single

Number of Pins :

3

Fall Time (Typ) :

20 ns

Series :

SuperMESH3™

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

140 mJ

Base Part Number :

STI6N

Continuous Drain Current (ID) :

5.5A

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

49 ns

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Additional Feature :

ULTRA LOW-ON RESISTANCE

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pin Count :

3

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 50V

Nominal Vgs :

3.75 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

620V

Height :

10.75mm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Width :

4.6mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3.75V

Power Dissipation-Max :

90W Tc

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Mount :

Through Hole

Length :

10.4mm

Drain to Source Voltage (Vdss) :

620V

Factory Lead Time :

12 Weeks