STH320N4F6-2
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- Mfr.Part #
- STH320N4F6-2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab) Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 200A H2PAK
- Stock
- 32,850
- In Stock ：
- 32,850
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 1.3m Ω @ 80A, 10V
- FET Type :
- N-Channel
- Rise Time :
- 98ns
- Power Dissipation-Max :
- 300W Tc
- Turn-Off Delay Time :
- 190 ns
- Width :
- 10.4mm
- Turn On Delay Time :
- 28 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 200A Tc
- Fall Time (Typ) :
- 95 ns
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Cut Tape (CT)
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab) Variant
- Base Part Number :
- STH320
- Mounting Type :
- Surface Mount
- Length :
- 15.8mm
- Drain to Source Breakdown Voltage :
- 40V
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Continuous Drain Current (ID) :
- 200A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Height :
- 4.8mm
- Datasheets
- STH320N4F6-2
N-Channel Cut Tape (CT) 1.3m Ω @ 80A, 10V ±20V 13800pF @ 15V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab) Variant
STH320N4F6-2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13800pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 190 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 28 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STH320N4F6-2 Features
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 190 ns
STH320N4F6-2 Applications
There are a lot of STMicroelectronics
STH320N4F6-2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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