STH3

Manufacturer :

Altech Corporation

Product Category :

Specialized

Continuous Drain Current (ID) :

2.5A

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Transistor Application :

SWITCHING

Number of Terminations :

2

Drain to Source Breakdown Voltage :

1.5kV

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9 Ω @ 1.3A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Turn On Delay Time :

24 ns

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

1500V

Vgs (Max) :

±30V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Max Junction Temperature (Tj) :

150°C

Number of Channels :

1

Factory Lead Time :

23 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab) Variant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Power Dissipation-Max :

140W Tc

Manufacturer Package Identifier :

H2PAK-2-8159712

Drain-source On Resistance-Max :

9Ohm

Input Capacitance (Ciss) (Max) @ Vds :

939pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

47ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

45 ns

Threshold Voltage :

4V

Base Part Number :

STH3N

Contact Plating :

Tin

Length :

10.4mm

Width :

15.8mm

Height :

5mm

Series :

PowerMESH™

Element Configuration :

Single

Power Dissipation :

140W

Avalanche Energy Rating (Eas) :

450 mJ

Radiation Hardening :

No

Terminal Form :

Gull wing

ECCN Code :

EAR99

FET Type :

N-Channel

Fall Time (Typ) :

61 ns

Case Connection :

DRAIN