STH272N6F7-6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0015Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

720A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1900 mJ

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Terminal Position :

Single

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

Automotive, AEC-Q101, STripFET™ F7

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G6

Mounting Type :

Surface Mount

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Power Dissipation-Max :

333W Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

180A

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Vgs (Max) :

±20V

Base Part Number :

STH272

Input Capacitance (Ciss) (Max) @ Vds :

11000pF @ 25V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 90A, 10V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN