STH210N75F6-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

720A

Terminal Form :

Gull wing

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

171nC @ 10V

Drain to Source Breakdown Voltage :

75V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

71 ns

Continuous Drain Current (ID) :

180A

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

STH210

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

154 ns

Number of Terminations :

2

Series :

DeepGATE™, STripFET™ VI

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 90A, 10V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Number of Pins :

3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lead Free :

Lead Free

Turn On Delay Time :

34 ns

RoHS Status :

ROHS3 Compliant

Length :

15.8mm

Power Dissipation-Max :

300W Tc

Rise Time :

70ns

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Height :

4.8mm

Resistance :

2.8MOhm

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Width :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

11800pF @ 25V

Power Dissipation :

300W