STH270N8F7-6
- Mfr.Part #
- STH270N8F7-6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 180A H2PAK
- Stock
- 4,065
- In Stock :
- 4,065
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- ULTRA LOW RESISTANCE
- Number of Pins :
- 7
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Drain to Source Breakdown Voltage :
- 80V
- Rise Time :
- 180ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 50V
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 180A
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Fall Time (Typ) :
- 42 ns
- Power Dissipation :
- 315W
- Turn On Delay Time :
- 56 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 315W Tc
- Length :
- 10.4mm
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G6
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Series :
- DeepGATE™, STripFET™ VII
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 98 ns
- Width :
- 15.25mm
- Gate Charge (Qg) (Max) @ Vgs :
- 193nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Height :
- 4.8mm
- Base Part Number :
- STH270
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 90A, 10V
- Vgs (Max) :
- ±20V
- Datasheets
- STH270N8F7-6

N-Channel Cut Tape (CT) 2.1m Ω @ 90A, 10V ±20V 13600pF @ 50V 193nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
STH270N8F7-6 Overview
A device's maximum input capacitance is 13600pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=80V, and this device has a drain-to-source breakdown voltage of 80V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 98 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 56 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH270N8F7-6 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 98 ns
STH270N8F7-6 Applications
There are a lot of STMicroelectronics
STH270N8F7-6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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