STH270N8F7-2
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- Mfr.Part #
- STH270N8F7-2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab) Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 180A H2PAK
- Stock
- 1,764
- In Stock ：
- 1,764
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 4.8mm
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 90A, 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 315W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 180A
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Transistor Application :
- SWITCHING
- Width :
- 15.8mm
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.4mm
- Drain-source On Resistance-Max :
- 0.0021Ohm
- Power Dissipation :
- 315W
- Rise Time :
- 180ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 15 Weeks
- Avalanche Energy Rating (Eas) :
- 1160 mJ
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 193nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- ULTRA LOW RESISTANCE
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 50V
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 720A
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 80V
- Turn On Delay Time :
- 56 ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab) Variant
- Series :
- DeepGATE™, STripFET™ VII
- FET Type :
- N-Channel
- Base Part Number :
- STH270
- Turn-Off Delay Time :
- 98 ns
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 42 ns
- Radiation Hardening :
- No
- Datasheets
- STH270N8F7-2
N-Channel Cut Tape (CT) 2.1m Ω @ 90A, 10V ±20V 13600pF @ 50V 193nC @ 10V TO-263-3, D2Pak (2 Leads + Tab) Variant
STH270N8F7-2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1160 mJ.The maximum input capacitance of this device is 13600pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.When VGS=80V, and ID flows to VDS at 80VVDS, the drain-source breakdown voltage is 80V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 98 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 720A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 56 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STH270N8F7-2 Features
the avalanche energy rating (Eas) is 1160 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 98 ns
based on its rated peak drain current 720A.
STH270N8F7-2 Applications
There are a lot of STMicroelectronics
STH270N8F7-2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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