STH250N55F3-6
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- Mfr.Part #
- STH250N55F3-6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 180A H2PAK
- Stock
- 1,980
- In Stock ：
- 1,980
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 25 ns
- Number of Terminations :
- 6
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G6
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 300W Tc
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 180A
- Turn-Off Delay Time :
- 110 ns
- Pin Count :
- 7
- Base Part Number :
- STH250
- Rise Time :
- 150ns
- Power Dissipation :
- 300W
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 245
- Fall Time (Typ) :
- 50 ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Series :
- STripFET™ III
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 60A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Resistance :
- 2.6MOhm
- Number of Pins :
- 7
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 55V
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- STH250N55F3-6
N-Channel Tape & Reel (TR) 2.6m Ω @ 60A, 10V ±20V 6800pF @ 25V 100nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
STH250N55F3-6 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 6800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH250N55F3-6 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 110 ns
STH250N55F3-6 Applications
There are a lot of STMicroelectronics
STH250N55F3-6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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