STH175N4F6-2AG
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- Mfr.Part #
- STH175N4F6-2AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A H2PAK-2
- Stock
- 1,131
- In Stock ：
- 1,131
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 24 ns
- Element Configuration :
- Single
- Length :
- 10.4mm
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Turn-Off Delay Time :
- 106 ns
- Base Part Number :
- STH175
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Height :
- 4.8mm
- Power Dissipation-Max :
- 150W Tc
- Series :
- Automotive, AEC-Q101, STripFET™ F6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 7735pF @ 20V
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.17mm
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 120A
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 60A, 10V
- Factory Lead Time :
- 20 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- STH175N4F6-2AG
N-Channel Cut Tape (CT) 2.4m Ω @ 60A, 10V ±20V 7735pF @ 20V 130nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH175N4F6-2AG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7735pF @ 20V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 106 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 24 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STH175N4F6-2AG Features
a continuous drain current (ID) of 120A
the turn-off delay time is 106 ns
a 40V drain to source voltage (Vdss)
STH175N4F6-2AG Applications
There are a lot of STMicroelectronics
STH175N4F6-2AG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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