STH110N10F7-6
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- Mfr.Part #
- STH110N10F7-6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A H2PAK-6
- Stock
- 31,117
- In Stock ：
- 31,117
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Turn-Off Delay Time :
- 52 ns
- Fall Time (Typ) :
- 21 ns
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Radiation Hardening :
- No
- Turn On Delay Time :
- 25 ns
- Series :
- DeepGATE™, STripFET™ VII
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Power Dissipation-Max :
- 150W Tc
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 55A, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Base Part Number :
- STH110
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Rise Time :
- 36ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5117pF @ 50V
- Number of Pins :
- 7
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 110A
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Datasheets
- STH110N10F7-6
N-Channel Cut Tape (CT) 6.5m Ω @ 55A, 10V ±20V 5117pF @ 50V 72nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
STH110N10F7-6 Overview
A device's maximum input capacitance is 5117pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 110A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 52 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH110N10F7-6 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 52 ns
STH110N10F7-6 Applications
There are a lot of STMicroelectronics
STH110N10F7-6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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