STH150N10F7-2
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- Mfr.Part #
- STH150N10F7-2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A H2PAK-2
- Stock
- 21,938
- In Stock ：
- 21,938
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 72 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 117nC @ 10V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Height :
- 4.8mm
- Lead Free :
- Lead Free
- Base Part Number :
- STH150
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Fall Time (Typ) :
- 33 ns
- FET Type :
- N-Channel
- Width :
- 10.57mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 8115pF @ 50V
- Rise Time :
- 57ns
- Factory Lead Time :
- 37 Weeks
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 55A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Series :
- DeepGATE™, STripFET™ VII
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 3.949996g
- Number of Channels :
- 1
- Power Dissipation-Max :
- 250W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Continuous Drain Current (ID) :
- 110A
- Turn On Delay Time :
- 33 ns
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STH150N10F7-2
N-Channel Cut Tape (CT) 3.9m Ω @ 55A, 10V ±20V 8115pF @ 50V 117nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH150N10F7-2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8115pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STH150N10F7-2 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 72 ns
STH150N10F7-2 Applications
There are a lot of STMicroelectronics
STH150N10F7-2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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