STH130N10F3-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

100V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

120A

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 60A, 10V

Number of Pins :

3

Series :

STripFET™ III

Transistor Element Material :

SILICON

Turn-Off Delay Time :

52 ns

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

450A

Power Dissipation-Max :

250W Tc

Fall Time (Typ) :

7.2 ns

Vgs (Max) :

±20V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3305pF @ 25V

Rise Time :

38ns

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

ULTRA LOW RESISTANCE

Case Connection :

DRAIN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Radiation Hardening :

No

Base Part Number :

STH130

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

250W

Factory Lead Time :

12 Weeks