STH12N120K5-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

690m Ω @ 6A, 10V

Drain-source On Resistance-Max :

0.69Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Base Part Number :

STH12N

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

245

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Manufacturer Package Identifier :

H2PAK-2-8159712

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

44.2nC @ 10V

Rise Time :

11ns

Fall Time (Typ) :

18.5 ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

FET Type :

N-Channel

ECCN Code :

EAR99

Turn-Off Delay Time :

68.5 ns

Height :

5mm

Drain to Source Voltage (Vdss) :

1200V

Continuous Drain Current (ID) :

12A

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation-Max :

250W Tc

Contact Plating :

Tin

JESD-609 Code :

e3

Power Dissipation :

250W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 100V

Series :

MDmesh™ K5

Turn On Delay Time :

23 ns

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PSSO-G2

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

1.2kV

Vgs(th) (Max) @ Id :

5V @ 100µA