STFV4N150
- Mfr.Part #
- STFV4N150
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 4A TO220
- Stock
- 30,029
- In Stock :
- 30,029
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Power Dissipation-Max :
- 40W Tc
- ECCN Code :
- EAR99
- Rise Time :
- 30ns
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 45 ns
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Drain-source On Resistance-Max :
- 7Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 1.5kV
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 4A
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 40W
- Turn-Off Delay Time :
- 45 ns
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 7 Ω @ 2A, 10V
- Drain to Source Voltage (Vdss) :
- 1500V
- Current Rating :
- 4A
- Number of Pins :
- 3
- Series :
- PowerMESH™
- Base Part Number :
- STFV4
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 1.5kV
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Datasheets
- STFV4N150

N-Channel Tube 7 Ω @ 2A, 10V ±30V 1300pF @ 25V 50nC @ 10V 1500V TO-220-3 Full Pack, Isolated Tab
STFV4N150 Description
STFV4N150 is a 1500v N-channel very high voltage PowerMESH? MOSFET. Using the well-consolidated high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics. The creepage path is what makes this package unique from TO-220FP.
The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package meet all stringent safety norms in high voltage applications.
STFV4N150 Features
-
Typical RDS(on)=5|?
-
Avalanche ruggedness
-
Gate charge minimized
-
Very low intrinsic capacitances
-
High-speed switching
-
The fully plastic TO-220 package
-
The creepage distance path is>4mm
STFV4N150 Applications
-
Computers
-
Electric Vehicles
-
Welding
-
Aircraft
-
Automation
-
Medical
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