STFV3N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

10A

Avalanche Energy Rating (Eas) :

450 mJ

Operating Temperature :

150°C TJ

Number of Pins :

3

Power Dissipation :

30W

Mount :

Through Hole

Fall Time (Typ) :

61 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Series :

PowerMESH™

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

9 Ω @ 1.3A, 10V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation-Max :

30W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn) - annealed

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Pin Count :

3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

1500V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

24 ns

Turn-Off Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

939pF @ 25V

Drain to Source Breakdown Voltage :

1.5kV

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack, Isolated Tab

JESD-609 Code :

e3

Packaging :

Tube

Transistor Element Material :

SILICON

Base Part Number :

STFV3

Rise Time :

47ns

Drain-source On Resistance-Max :

9Ohm