STFU15NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

983pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

650V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Base Part Number :

STFU1

Packaging :

Tube

Case Connection :

Isolated

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

33.3nC @ 10V

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

187 mJ

Operating Temperature :

-55°C~150°C TJ

Series :

MDmesh™ II

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation-Max :

30W Tc

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±25V

Drain to Source Voltage (Vdss) :

650V

Drain-source On Resistance-Max :

0.38Ohm

FET Type :

N-Channel

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

JESD-609 Code :

e3