STF4NK50ZD
- Mfr.Part #
- STF4NK50ZD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A TO220FP
- Stock
- 17,738
- In Stock :
- 17,738
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 3A
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.5A, 10V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 120 mJ
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Continuous Drain Current (ID) :
- 3A
- Mount :
- Through Hole
- Series :
- SuperMESH™
- Voltage - Rated DC :
- 500V
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 12A
- Turn On Delay Time :
- 9.5 ns
- Fall Time (Typ) :
- 22 ns
- Power Dissipation-Max :
- 20W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Base Part Number :
- STF4N
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Pin Count :
- 3
- Rise Time :
- 15.5ns
- Power Dissipation :
- 20W
- Turn-Off Delay Time :
- 23 ns
- Packaging :
- Tube
- Radiation Hardening :
- No
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- STF4NK50ZD

N-Channel Tube 2.7 Ω @ 1.5A, 10V ±30V 310pF @ 25V 12nC @ 10V TO-220-3 Full Pack
STF4NK50ZD Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 310pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [3A] according to its drain current.It is [23 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 12A.A turn-on delay time of 9.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF4NK50ZD Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 12A.
STF4NK50ZD Applications
There are a lot of STMicroelectronics
STF4NK50ZD applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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